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${\mathrm{Nb}}_3\mathrm{Sn}$film coatings have the potential to drastically improve the accelerating performance of Nb superconducting radiofrequency (SRF) cavities in next-generation linear particle accelerators. Unfortunately, persistent ${\mathrm{Nb}}_3\mathrm{Sn}$stoichiometric material defects formed during fabrication limit the cryogenic operating temperature and accelerating gradient by nucleating magnetic vortices that lead to premature cavity quenching. The SRF community currently lacks a predictive model that can explain the impact of chemical and morphological properties of ${\mathrm{Nb}}_3\mathrm{Sn}$defects on vortex nucleation and maximum accelerating gradients. Both experimental and theoretical studies of the material and superconducting properties of the first 100 nm of ${\mathrm{Nb}}_3\mathrm{Sn}$surfaces are complicated by significant variations in the volume distribution and topography of stoichiometric defects. This work contains a coordinated experimental study with supporting simulations to identify how the observed chemical composition and morphology of certain Sn-rich and Sn-deficient surface defects can impact the SRF performance. ${\mathrm{Nb}}_3\mathrm{Sn}$films were prepared with varying degrees of stoichiometric defects, and the film surface morphologies were characterized. Both Sn-rich and Sn-deficient regions were identified in these samples. For Sn-rich defects, we focus on elemental Sn islands that are partially embedded into the ${\mathrm{Nb}}_3\mathrm{Sn}$film. Using finite element simulations of the time-dependent Ginzburg-Landau equations, we estimate vortex nucleation field thresholds at Sn islands of varying size, geometry, and embedment. We find that these islands can lead to significant SRF performance degradation that could not have been predicted from the ensemble stoichiometry alone. For Sn-deficient ${\mathrm{Nb}}_3\mathrm{Sn}$surfaces, we experimentally identify a periodic nanoscale surface corrugation that likely forms because of extensive Sn loss from the surface. Simulation results show that the surface corrugations contribute to the already substantial drop in the vortex nucleation field of Sn-deficient ${\mathrm{Nb}}_3\mathrm{Sn}$surfaces. This work provides a systematic approach for future studies to further detail the relationship between experimental ${\mathrm{Nb}}_3\mathrm{Sn}$growth conditions, stoichiometric defects, geometry, and vortex nucleation. These findings have technical implications that will help guide improvements to ${\mathrm{Nb}}_3\mathrm{Sn}$fabrication procedures. Our outlined experiment-informed theoretical methods can assist future studies in making additional key insights about ${\mathrm{Nb}}_3\mathrm{Sn}$stoichiometric defects that will help build the next generation of SRF cavities and support related superconducting materials development efforts. Published by the American Physical Society2024 

We study the ultrafast time resolved response of 30 nm films of VO₂on a TiO₂substrate when 3.1 eV (400 nm wavelength) pump pulses were used to excite the insulator to metal transition (IMT). We found that the IMT threshold for these samples (≤30µJ/cm²) is more than 3 orders of magnitude lower than that generally reported for a more traditional 1.55 eV (800 nm wavelength) excitation. The samples also exhibited unusual reflectivity dynamics at near-threshold values of pump fluence where their fractional relative reflectivity ΔR/R initially increased before becoming negative after several hundreds of picoseconds, in stark contrast with uniformly negative ΔR/R observed for both higher 400 nm pump fluences and for 800 nm pump pulses. We explain the observed behavior by the interference of the reflected probe beam from the inhomogeneous layers formed inside the film by different phases of VO₂and use a simple diffusion model of the VO₂phase transition to support qualitatively this hypothesis. We also compare the characteristics of the VO₂films grown on undoped TiO₂and on doped TiO₂:Nb substrates and observe more pronounced reflectivity variation during IMT and faster relaxation to the insulating state for the VO₂/TiO₂:Nb sample.